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Quantum well‐free nitride‐based UV LEDs emitting at 380 nm

Identifieur interne : 000181 ( France/Analysis ); précédent : 000180; suivant : 000182

Quantum well‐free nitride‐based UV LEDs emitting at 380 nm

Auteurs : Philippe De Mierry [France] ; Frank Tinjod [France] ; Sébastien Chenot [France] ; David Lancefield [Royaume-Uni]

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Mots-clés :

Abstract

CVD. The bare chip device shows a strong UV emission at 380 nm, with a maximum output power of 1.6 mW at 140 mA, and a junction temperature of 120 °C. The saturation of the external quantum efficiency (EQE) occurs at 0.5 kA/cm2 (∼80 mA), a much higher value than the 10 A/cm2 commonly reported in quantum wells (QWs) based nitride LEDs. This behavior can be accounted for by a temperature dependent non‐radiative recombination rate which increases at high injection currents. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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DOI: 10.1002/pssc.200673560


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ISTEX:F67A0B8586D69EA8443163782B45CCAA896D9A31

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