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Laser generated Ge ions accelerated by additional electrostatic field for implantation technology

Identifieur interne : 000498 ( PascalFrancis/Curation ); précédent : 000497; suivant : 000499

Laser generated Ge ions accelerated by additional electrostatic field for implantation technology

Auteurs : M. Rosinski [Pologne] ; P. Gasior [Pologne] ; E. Fazio [Italie] ; L. Ando [Italie] ; L. Giuffrida [Italie] ; L. Torrisi [Italie] ; P. Parys [Pologne] ; A. M. Mezzasalma [Italie] ; J. Wolowski [Pologne]

Source :

RBID : Pascal:13-0273489

Descripteurs français

English descriptors

Abstract

The paper presents research on the optimization of the laser ion implantation method with electrostatic acceleration/deflection including numerical simulations by the means of the Opera 3D code and experimental tests at the IPPLM, Warsaw. To introduce the ablation process an Nd:YAG laser system with repetition rate of 10 Hz, pulse duration of 3.5 ns and pulse energy of 0.5 J has been applied. Ion time of flight diagnostics has been used in situ to characterize concentration and energy distribution in the obtained ion streams while the postmortem analysis of the implanted samples was conducted by the means of XRD, FTIR and Raman Spectroscopy. In the paper the predictions of the Opera 3D code are compared with the results of the ion diagnostics in the real experiment. To give the whole picture of the method, the postmortem results of the XRD, FTIR and Raman characterization techniques are discussed. Experimental results show that it is possible to achieve the development of a micrometer-sized crystalline Ge phase and/or an amorphous one only after a thermal annealing treatment.
pA  
A01 01  1    @0 0169-4332
A03   1    @0 Appl. surf. sci.
A05       @2 272
A08 01  1  ENG  @1 Laser generated Ge ions accelerated by additional electrostatic field for implantation technology
A09 01  1  ENG  @1 5th Workshop on Plasma Production by Laser Ablation (PPLA2011)
A11 01  1    @1 ROSINSKI (M.)
A11 02  1    @1 GASIOR (P.)
A11 03  1    @1 FAZIO (E.)
A11 04  1    @1 ANDO (L.)
A11 05  1    @1 GIUFFRIDA (L.)
A11 06  1    @1 TORRISI (L.)
A11 07  1    @1 PARYS (P.)
A11 08  1    @1 MEZZASALMA (A. M.)
A11 09  1    @1 WOLOWSKI (J.)
A12 01  1    @1 MEZZASALMA (Angela Maria) @9 ed.
A14 01      @1 Institute of Plasma Physics and Laser Microfusion @2 Warsaw @3 POL @Z 1 aut. @Z 2 aut. @Z 7 aut. @Z 9 aut.
A14 02      @1 Dipartimento di Fisica, Università di Messina @2 Messina @3 ITA @Z 5 aut. @Z 6 aut.
A14 03      @1 Dipartimento di Fisica della Materia e Ingegneria Elettronica, Università di Messina @2 Messina @3 ITA @Z 3 aut. @Z 8 aut.
A14 04      @1 INFN - Laboratori Nazionali del Sud @2 Catania @3 ITA @Z 4 aut. @Z 5 aut. @Z 6 aut.
A20       @1 109-113
A21       @1 2013
A23 01      @0 ENG
A43 01      @1 INIST @2 16002 @5 354000503758160210
A44       @0 0000 @1 © 2013 INIST-CNRS. All rights reserved.
A45       @0 12 ref.
A47 01  1    @0 13-0273489
A60       @1 P
A61       @0 A
A64 01  1    @0 Applied surface science
A66 01      @0 NLD
C01 01    ENG  @0 The paper presents research on the optimization of the laser ion implantation method with electrostatic acceleration/deflection including numerical simulations by the means of the Opera 3D code and experimental tests at the IPPLM, Warsaw. To introduce the ablation process an Nd:YAG laser system with repetition rate of 10 Hz, pulse duration of 3.5 ns and pulse energy of 0.5 J has been applied. Ion time of flight diagnostics has been used in situ to characterize concentration and energy distribution in the obtained ion streams while the postmortem analysis of the implanted samples was conducted by the means of XRD, FTIR and Raman Spectroscopy. In the paper the predictions of the Opera 3D code are compared with the results of the ion diagnostics in the real experiment. To give the whole picture of the method, the postmortem results of the XRD, FTIR and Raman characterization techniques are discussed. Experimental results show that it is possible to achieve the development of a micrometer-sized crystalline Ge phase and/or an amorphous one only after a thermal annealing treatment.
C02 01  3    @0 001B60
C02 02  3    @0 001B70
C02 03  3    @0 001B80
C03 01  3  FRE  @0 Germanium @2 NC @5 01
C03 01  3  ENG  @0 Germanium @2 NC @5 01
C03 02  3  FRE  @0 Implantation ion @5 02
C03 02  3  ENG  @0 Ion implantation @5 02
C03 03  3  FRE  @0 Ge @4 INC @5 32
N21       @1 259
N44 01      @1 OTO
N82       @1 OTO

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Pascal:13-0273489

Le document en format XML

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<div type="abstract" xml:lang="en">The paper presents research on the optimization of the laser ion implantation method with electrostatic acceleration/deflection including numerical simulations by the means of the Opera 3D code and experimental tests at the IPPLM, Warsaw. To introduce the ablation process an Nd:YAG laser system with repetition rate of 10 Hz, pulse duration of 3.5 ns and pulse energy of 0.5 J has been applied. Ion time of flight diagnostics has been used in situ to characterize concentration and energy distribution in the obtained ion streams while the postmortem analysis of the implanted samples was conducted by the means of XRD, FTIR and Raman Spectroscopy. In the paper the predictions of the Opera 3D code are compared with the results of the ion diagnostics in the real experiment. To give the whole picture of the method, the postmortem results of the XRD, FTIR and Raman characterization techniques are discussed. Experimental results show that it is possible to achieve the development of a micrometer-sized crystalline Ge phase and/or an amorphous one only after a thermal annealing treatment.</div>
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<fC02 i1="03" i2="3">
<s0>001B80</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE">
<s0>Germanium</s0>
<s2>NC</s2>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG">
<s0>Germanium</s0>
<s2>NC</s2>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE">
<s0>Implantation ion</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG">
<s0>Ion implantation</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE">
<s0>Ge</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fN21>
<s1>259</s1>
</fN21>
<fN44 i1="01">
<s1>OTO</s1>
</fN44>
<fN82>
<s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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