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Laser produced streams of Ge ions accelerated and optimized in the electric fields for implantation into SiO2 substrates.

Identifieur interne : 000955 ( Ncbi/Merge ); précédent : 000954; suivant : 000956

Laser produced streams of Ge ions accelerated and optimized in the electric fields for implantation into SiO2 substrates.

Auteurs : M. Rosinski [Pologne] ; L. Giuffrida ; P. Parys ; P. Gasior ; E. Fazio ; A M Mezzasalma ; L. Torrisi ; L. Ando ; J. Wolowski

Source :

RBID : pubmed:22380284

Abstract

Ge crystals were prepared by means of laser-induced ion implantation technique. A Nd:YAG pulsed laser (repetition rate: 10 Hz; pulse duration: 3.5 ns; pulse energy: ∼0.5 J) was used both as an ion source and to carry out the ablation processes. The optimization of the laser-generated ion beam parameters in a broad energy and current density range has been obtained controlling the electrostatic field parameters. Numerical simulations of the focusing system, performed adopting an OPERA 3D code, and an investigation of the ion characteristics, using the ion time-of-flight method, have allowed to optimize the preparation parameters. The structural properties of the samples were investigated by means of x-ray photoelectron, micro-Raman spectroscopies, and scanning electron microscopy techniques. Experimental results show that, by appropriately varying the ion implantation parameters and by a post-preparation annealing treatment, it is possible to achieve the development of a micrometer-sized crystalline Ge phase and∕or an amorphous one.

DOI: 10.1063/1.3660819
PubMed: 22380284

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pubmed:22380284

Le document en format XML

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