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Comparison of substrate temperature and deposition rate between modified pulsed arc process and d.c. arc process

Identifieur interne : 000317 ( Main/Exploration ); précédent : 000316; suivant : 000318

Comparison of substrate temperature and deposition rate between modified pulsed arc process and d.c. arc process

Auteurs : B. Engers [Allemagne] ; H. Fuchs [Allemagne] ; J. Schultz [Allemagne] ; E. Hettkamp [Allemagne] ; H. Mecke [Allemagne]

Source :

RBID : ISTEX:D134AF05FCE0E0A7F8D0BD4073301C44ECF36432

Mots-clés :

Abstract

The interaction of the substrate temperature and the deposition rate in a vacuum arc deposition process were investigated with regards to dependence on static and dynamic arc current parameters. Two different deposition systems both for industry as well as for laboratory application distinguished in shape and volume of the recipient were used for the experiments. In reference to the d.c. process one can achieve the same deposition rate at a noticeably lower substrate temperature when using the modified pulsed arc process. Furthermore, it is obvious without a detailed analysis that the quality of the coatings deposited by the pulsed arc is fairly higher. In order to control the substrate temperature via the pulse parameters the r.m.s. ion current has to be changed (at a constant average current). Using a theoretical model a decreased substrate temperature at higher ion energy was found.


Url:
DOI: 10.1016/S0257-8972(00)00885-9


Affiliations:


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Le document en format XML

<record>
<TEI wicri:istexFullTextTei="biblStruct">
<teiHeader>
<fileDesc>
<titleStmt>
<title xml:lang="en">Comparison of substrate temperature and deposition rate between modified pulsed arc process and d.c. arc process</title>
<author>
<name sortKey="Engers, B" sort="Engers, B" uniqKey="Engers B" first="B" last="Engers">B. Engers</name>
</author>
<author>
<name sortKey="Fuchs, H" sort="Fuchs, H" uniqKey="Fuchs H" first="H" last="Fuchs">H. Fuchs</name>
</author>
<author>
<name sortKey="Schultz, J" sort="Schultz, J" uniqKey="Schultz J" first="J" last="Schultz">J. Schultz</name>
</author>
<author>
<name sortKey="Hettkamp, E" sort="Hettkamp, E" uniqKey="Hettkamp E" first="E" last="Hettkamp">E. Hettkamp</name>
</author>
<author>
<name sortKey="Mecke, H" sort="Mecke, H" uniqKey="Mecke H" first="H" last="Mecke">H. Mecke</name>
</author>
</titleStmt>
<publicationStmt>
<idno type="wicri:source">ISTEX</idno>
<idno type="RBID">ISTEX:D134AF05FCE0E0A7F8D0BD4073301C44ECF36432</idno>
<date when="2000" year="2000">2000</date>
<idno type="doi">10.1016/S0257-8972(00)00885-9</idno>
<idno type="url">https://api.istex.fr/document/D134AF05FCE0E0A7F8D0BD4073301C44ECF36432/fulltext/pdf</idno>
<idno type="wicri:Area/Main/Corpus">000249</idno>
<idno type="wicri:explorRef" wicri:stream="Main" wicri:step="Corpus" wicri:corpus="ISTEX">000249</idno>
<idno type="wicri:Area/Main/Curation">000249</idno>
<idno type="wicri:Area/Main/Exploration">000317</idno>
<idno type="wicri:explorRef" wicri:stream="Main" wicri:step="Exploration">000317</idno>
</publicationStmt>
<sourceDesc>
<biblStruct>
<analytic>
<title level="a" type="main" xml:lang="en">Comparison of substrate temperature and deposition rate between modified pulsed arc process and d.c. arc process</title>
<author>
<name sortKey="Engers, B" sort="Engers, B" uniqKey="Engers B" first="B" last="Engers">B. Engers</name>
<affiliation wicri:level="1">
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>STARC Technologies, A Division of AWS, An der Liethe 5, 39418 Staßfurt</wicri:regionArea>
<wicri:noRegion>39418 Staßfurt</wicri:noRegion>
<wicri:noRegion>39418 Staßfurt</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Fuchs, H" sort="Fuchs, H" uniqKey="Fuchs H" first="H" last="Fuchs">H. Fuchs</name>
<affiliation wicri:level="1">
<country wicri:rule="url">Allemagne</country>
</affiliation>
<affiliation wicri:level="3">
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Otto-von-Guericke-University of Magdeburg, Institute of Electric Power Systems, Universitaetsplatz 2, 39106 Magdeburg</wicri:regionArea>
<placeName>
<region type="land" nuts="2">Saxe-Anhalt</region>
<settlement type="city">Magdebourg</settlement>
</placeName>
</affiliation>
</author>
<author>
<name sortKey="Schultz, J" sort="Schultz, J" uniqKey="Schultz J" first="J" last="Schultz">J. Schultz</name>
<affiliation wicri:level="1">
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>STARC Technologies, A Division of AWS, An der Liethe 5, 39418 Staßfurt</wicri:regionArea>
<wicri:noRegion>39418 Staßfurt</wicri:noRegion>
<wicri:noRegion>39418 Staßfurt</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Hettkamp, E" sort="Hettkamp, E" uniqKey="Hettkamp E" first="E" last="Hettkamp">E. Hettkamp</name>
<affiliation wicri:level="3">
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Otto-von-Guericke-University of Magdeburg, Institute of Electric Power Systems, Universitaetsplatz 2, 39106 Magdeburg</wicri:regionArea>
<placeName>
<region type="land" nuts="2">Saxe-Anhalt</region>
<settlement type="city">Magdebourg</settlement>
</placeName>
</affiliation>
</author>
<author>
<name sortKey="Mecke, H" sort="Mecke, H" uniqKey="Mecke H" first="H" last="Mecke">H. Mecke</name>
<affiliation wicri:level="3">
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Otto-von-Guericke-University of Magdeburg, Institute of Electric Power Systems, Universitaetsplatz 2, 39106 Magdeburg</wicri:regionArea>
<placeName>
<region type="land" nuts="2">Saxe-Anhalt</region>
<settlement type="city">Magdebourg</settlement>
</placeName>
</affiliation>
</author>
</analytic>
<monogr></monogr>
<series>
<title level="j">Surface & Coatings Technology</title>
<title level="j" type="abbrev">SCT</title>
<idno type="ISSN">0257-8972</idno>
<imprint>
<publisher>ELSEVIER</publisher>
<date type="published" when="2000">2000</date>
<biblScope unit="vol">133–134</biblScope>
<biblScope unit="supplement">C</biblScope>
<biblScope unit="page" from="121">121</biblScope>
<biblScope unit="page" to="125">125</biblScope>
</imprint>
<idno type="ISSN">0257-8972</idno>
</series>
<idno type="istex">D134AF05FCE0E0A7F8D0BD4073301C44ECF36432</idno>
<idno type="DOI">10.1016/S0257-8972(00)00885-9</idno>
<idno type="PII">S0257-8972(00)00885-9</idno>
</biblStruct>
</sourceDesc>
<seriesStmt>
<idno type="ISSN">0257-8972</idno>
</seriesStmt>
</fileDesc>
<profileDesc>
<textClass>
<keywords scheme="KwdEn" xml:lang="en">
<term>Deposition rate</term>
<term>Pulsed arc</term>
<term>Substrate temperature</term>
</keywords>
</textClass>
<langUsage>
<language ident="en">en</language>
</langUsage>
</profileDesc>
</teiHeader>
<front>
<div type="abstract" xml:lang="en">The interaction of the substrate temperature and the deposition rate in a vacuum arc deposition process were investigated with regards to dependence on static and dynamic arc current parameters. Two different deposition systems both for industry as well as for laboratory application distinguished in shape and volume of the recipient were used for the experiments. In reference to the d.c. process one can achieve the same deposition rate at a noticeably lower substrate temperature when using the modified pulsed arc process. Furthermore, it is obvious without a detailed analysis that the quality of the coatings deposited by the pulsed arc is fairly higher. In order to control the substrate temperature via the pulse parameters the r.m.s. ion current has to be changed (at a constant average current). Using a theoretical model a decreased substrate temperature at higher ion energy was found. </div>
</front>
</TEI>
<affiliations>
<list>
<country>
<li>Allemagne</li>
</country>
<region>
<li>Saxe-Anhalt</li>
</region>
<settlement>
<li>Magdebourg</li>
</settlement>
</list>
<tree>
<country name="Allemagne">
<noRegion>
<name sortKey="Engers, B" sort="Engers, B" uniqKey="Engers B" first="B" last="Engers">B. Engers</name>
</noRegion>
<name sortKey="Fuchs, H" sort="Fuchs, H" uniqKey="Fuchs H" first="H" last="Fuchs">H. Fuchs</name>
<name sortKey="Fuchs, H" sort="Fuchs, H" uniqKey="Fuchs H" first="H" last="Fuchs">H. Fuchs</name>
<name sortKey="Hettkamp, E" sort="Hettkamp, E" uniqKey="Hettkamp E" first="E" last="Hettkamp">E. Hettkamp</name>
<name sortKey="Mecke, H" sort="Mecke, H" uniqKey="Mecke H" first="H" last="Mecke">H. Mecke</name>
<name sortKey="Schultz, J" sort="Schultz, J" uniqKey="Schultz J" first="J" last="Schultz">J. Schultz</name>
</country>
</tree>
</affiliations>
</record>

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